Top Electrode Engineering for High‐Performance Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Capacitors (Adv. Mater. Technol. 16/2023)
نویسندگان
چکیده
Top Electrode Engineering In article 2300146, Cheol Seong Hwang and co-workers demonstrate that the Ru top electrode significantly improves ferroelectric performance of Hf0.5Zr0.5O2/TiN bottom thin film capacitor by adequately controlling oxygen vacancy concentration at interface. Therefore, interfacial engineering is an important technology can overcome trade-off relationship between polarization endurance properties Hf0.5Zr0.5O2 film.
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ژورنال
عنوان ژورنال: Advanced materials and technologies
سال: 2023
ISSN: ['2365-709X']
DOI: https://doi.org/10.1002/admt.202370074